Study of PbSnTe Single Heterojunction Diodes.
NAVAL POSTGRADUATE SCHOOL MONTEREY CALIF
Pagination or Media Count:
The electrical and photovoltaic properties of single heterojunction SH Pb1-xSnxTe diodes have been studied. SH diodes were fabricated by sequential depositions of p-type Pb0.86Sn0.14Te using stiochiometric source material and n-type Pb0.80Sn0.20Te using metal rich source material. At T 77K, their energy gaps are 0.136 ev and 0.103 ev, respectively. SH diodes of good rectification with RoA products ranging from 3.5 to 18.6 have been obtained. Operated at 100K, 500K black body photovoltaic responses up to 0.2 voltwatt has been obtained. The current-voltage characteristics have been studied theoretically based on both the Anderson Diffusion Model and the Thermionic Emission Model. Using Andersons model, and assuming delta Ec 0, constant electron affinity across the junction, fair agreements have been found between measurements and theoretical calculations. Author
- Electrical and Electronic Equipment
- Solid State Physics