Accession Number:

AD0765173

Title:

Reliability Evaluation of 54L20 Radiation Hardened Dual Nand Gates,

Descriptive Note:

Final rept.,

Corporate Author:

ROME AIR DEVELOPMENT CENTER GRIFFISS AFB N Y

Report Date:

1973-06-01

Pagination or Media Count:

51.0

Abstract:

TRONICS, DAMAGE, RADIATION EFFECTS, SILICIDES, RESISTORS, METAL FILMS, CHROMIUM COMPOUNDS, TESTSRADIATION HARDENING, THIN FILMSRadiation hardened low power microcircuits using high resistivity thin film chrome silicide resistors were evaluated by subjecting the devices to conventional high temperature stress tests and a special low temperature screen test. The predominant failure mechanisms of two failures generated under the high temperature stress tests consisted of oxide defects and surface inversion. Results of this test program indicated there were no thin film resistor failures in these devices either under high temperature or low temperature test conditions. It appears that the chrome silicide resistors show promise of improving the reliability of hardened circuits, however, other factors may be contributing to these observed results. Author

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE