The Dynamic Response of a Semiconductor Configuration to Electron Loading.
SYSTEMS SCIENCE AND SOFTWARE LA JOLLA CALIF
Pagination or Media Count:
. Halda,E. J. SSS-R-72-1410DAAG39-71-C-0003HDL-27322FHDL003-3silicon, damage, transistors, electron irradiation, transients, deformation, monte carlo method, umonte carlo methodresponse, transientsA two-dimensional elastic-plastic hydrodynamics code has been used to calculate the mechanical response of six axisymmetric semiconductor configurations to electron-beam loading. The grid response is displayed and discussed. The time variations of rear-surface velocities and displacements are shown at selected positions, while some rear-surface responses are exhibited as functions of radius at particular times. These calculations were performed for the prediction of, and comparison with, experimental measurements made on specimens tested using an electron accelerator at Harry Diamond Laboratories. Author
- Electrical and Electronic Equipment
- Solid State Physics