Reliability of High Field Semiconductor Devices.
Interim rept. 1 Apr-30 Sep 72,
MICROWAVE ASSOCIATES INC BURLINGTON MASS
Pagination or Media Count:
07-72-C-0101DA-1-S-662705-A-0561-S-662705-A-05601ECOM0101-72-Isemiconductor diodes, reliabilityelectronics, microwave oscillators, gallium arsenides, silicon, transients, failureelectronics, test methods, test equipmentgunn diodes, impatt diodes, transient radiation effectselectronicsThe report describes the results of a continuing program of investigation concerning the reliability and failure modes of gallium arsenide Gunn, and IMPATT diodes and silicon IMPATT diodes. Data is presented concerning the burn-out distribution in time and parameter change of 553 Gunn diodes placed on high temperature dc burn-in. The results of Gunn diode switching transient reliability tests and long term dc burn-in data are also reported. Temperature measurement data on operating gallium arsenide Gunn and IMPATT diodes obtained using an infrared radiometer are presented. Author
- Electrical and Electronic Equipment