Thermal Response of Power Transistors.
ARMY MISSILE COMMAND REDSTONE ARSENAL ALA GROUND EQUIPMENT AND MATERIALS DIRECTORATE
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The report is a study of the thermal effects on planar epitaxial silicon power transistors. The primary objectives considered are power dissipation and junction temperature of the device. A nonlinear digital program model is developed with temperature being the dynamic factor. Theoretical techniques are developed to describe I subCBO, forward, and saturation region of operation, with respect to the temperature variable. Throughout the study, temperature has significant effects upon the operation of the silicon power transistor. Author
- Electrical and Electronic Equipment