Accession Number:

AD0763903

Title:

Thermal Response of Power Transistors.

Descriptive Note:

Technical rept.,

Corporate Author:

ARMY MISSILE COMMAND REDSTONE ARSENAL ALA GROUND EQUIPMENT AND MATERIALS DIRECTORATE

Personal Author(s):

Report Date:

1973-06-01

Pagination or Media Count:

116.0

Abstract:

The report is a study of the thermal effects on planar epitaxial silicon power transistors. The primary objectives considered are power dissipation and junction temperature of the device. A nonlinear digital program model is developed with temperature being the dynamic factor. Theoretical techniques are developed to describe I subCBO, forward, and saturation region of operation, with respect to the temperature variable. Throughout the study, temperature has significant effects upon the operation of the silicon power transistor. Author

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE