Physics of Semiconductor Luminescence and High-Temperature Semiconductors.
Final rept. 1 Jun 68-14 Mar 73,
MASSACHUSETTS INST OF TECH CAMBRIDGE DEPT OF ELECTRICAL ENGINEERING
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A new luminescence modulation effect was observed in Si and Ge and a new negative resistance phenomenon discovered in Ge. The intrinsic energy band levels in Al,GaAs were studied as a function of alloy composition, and the modulation of Al,GaAs luminescence by surface fields investigated. Higher quality crystals of the wide band-gap semiconductor stannic oxide than previously available were grown and extensive studies were undertaken of SnO2s electrical and optical properties, crystal growth, and device technology. Author
- Solid State Physics