Accession Number:

AD0763840

Title:

Physics of Semiconductor Luminescence and High-Temperature Semiconductors.

Descriptive Note:

Final rept. 1 Jun 68-14 Mar 73,

Corporate Author:

MASSACHUSETTS INST OF TECH CAMBRIDGE DEPT OF ELECTRICAL ENGINEERING

Report Date:

1973-07-02

Pagination or Media Count:

23.0

Abstract:

A new luminescence modulation effect was observed in Si and Ge and a new negative resistance phenomenon discovered in Ge. The intrinsic energy band levels in Al,GaAs were studied as a function of alloy composition, and the modulation of Al,GaAs luminescence by surface fields investigated. Higher quality crystals of the wide band-gap semiconductor stannic oxide than previously available were grown and extensive studies were undertaken of SnO2s electrical and optical properties, crystal growth, and device technology. Author

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE