Growth and Characterization of GaAs and Mixed III-V Semiconductor Compounds.
Rept. for Jul 69-Jun 73,
UNIVERSITY OF SOUTHERN CALIFORNIA LOS ANGELES ELECTRONIC SCIENCES LAB
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Gallium arsenide crystals were grown 1 cm in diameter by the gradient freeze technique and by the travelling heater method THM using a gallium zone. Optimal conditions for THM with a 1 cm long resistance heater were determined to be a heater temperature of 900C, a lowering rate of 1.5 mmday, a 6 to 10 mm long zone, a 1 cm long seed and a feed ingot over 2 mm long. Experimental results agreed well with a classical constitutional supercooling analysis. Preliminary experiments of THM growth of GaxIn1-xSb and GaxAl1-xAs were also performed. Classical constitutional supercooling theory was extended to multicomponent systems. Author
- Solid State Physics