Accession Number:

AD0763761

Title:

Growth and Characterization of GaAs and Mixed III-V Semiconductor Compounds.

Descriptive Note:

Rept. for Jul 69-Jun 73,

Corporate Author:

UNIVERSITY OF SOUTHERN CALIFORNIA LOS ANGELES ELECTRONIC SCIENCES LAB

Personal Author(s):

Report Date:

1973-06-01

Pagination or Media Count:

233.0

Abstract:

Gallium arsenide crystals were grown 1 cm in diameter by the gradient freeze technique and by the travelling heater method THM using a gallium zone. Optimal conditions for THM with a 1 cm long resistance heater were determined to be a heater temperature of 900C, a lowering rate of 1.5 mmday, a 6 to 10 mm long zone, a 1 cm long seed and a feed ingot over 2 mm long. Experimental results agreed well with a classical constitutional supercooling analysis. Preliminary experiments of THM growth of GaxIn1-xSb and GaxAl1-xAs were also performed. Classical constitutional supercooling theory was extended to multicomponent systems. Author

Subject Categories:

  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE