Research on Ternary Compound Semiconductors for Long-Wavelength Infrared Detection.
Final rept. 1 Apr 72-31 May 73,
HONEYWELL INC BLOOMINGTON MINN CORPORATE RESEARCH CENTER
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New ternary diamond-like semiconductors have been investigated as possible long wavelength infrared detector materials. Fifteen combinations from three different classes of compounds, AIIBIVC2V,A2IBIVC3VI and A3IBVC4VI, have been tried. Of these only six show any traces of a ternary compound having been formed, and only two of these, Cu2GeSe3 and Cu2SnSe3, can be grown for a melt. The energy gaps for these compounds were found to be 0.85 eV and 0.5 eV, respectively. The compounds ZnSnSb2 and Cu3SbSe4 form via peritectic reactions and thus require more elaborate crystal growth procedures. The energy gaps were found to be no greater than 1.0 eV for ZnSnSb2 and about 0.2 eV for Cu3SbSe4. Bandgaps for the remaining ternary compounds, Cu2GeTe3 and Cu3AsSe4, were not determined. All material produced was heavily doped p-type, p10 to the 18th powercc, probably due to stoichiometric defects. Author
- Infrared Detection and Detectors
- Solid State Physics