Evaluation of Gallium Nitride for Active Microwave Devices.
Annual technical progress rept. 1 Mar 72-31 Mar 73,
UNIVERSITY OF SOUTHERN CALIFORNIA LOS ANGELES ELECTRONIC SCIENCES LAB
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The study of the heterepitaxial growth of single crystal GaN was being undertaken both by open tube chemical vapor despotion and by organometal vapor transport growth. GaN thin film, deposited on 1,-1,0,2 sapphire, were typically transparent in color with the corresponding values of 0.15 mm thick x 2 x 1 cm, 4 x 10 to the 18th powercc carrier density and 90 sq. cm.v-sec mobility. Preliminary study for the drift velocity and for good ohmic contacts and Schottky barrier materials were also made by I-V technique and photoresponse method. Author
- Solid State Physics