Accession Number:

AD0763408

Title:

Structural Properties of Amorphous Semiconductors by Mossbauer Spectroscopy

Descriptive Note:

Semi-annual technical rept. no. 2

Corporate Author:

JOHNS HOPKINS UNIV LAUREL MD APPLIED PHYSICS LAB

Personal Author(s):

Report Date:

1973-05-31

Pagination or Media Count:

15.0

Abstract:

The amorphous to crystalline transition in vacuum deposited tellurium films has been observed using Mossbauer spectroscopy. Although the work is still preliminary, a large difference between the amorphous and crystalline forms of tellurium has been observed in the recoil free fraction as well as a smaller, but measurable, difference between the magnitudes of the quadrupole interactions. The samples studied contain 50 enriched tellurium-125 and are about 2 microns thick. Attempts to form thicker films have met with difficulties which may be overcome in further experiments. Thicker or higher enrichment films will result in better quality spectra which will be easier to analyze and interpret.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE