The Susceptibility of X-Band Point-Contact Diodes to Microwave Radiation
NAVAL WEAPONS LAB DAHLGREN VA
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The report describes the techniques and results of an investigation of the susceptibility of 1N23 point-contact microwave diodes to RF 9.375 GHz energy. Using a minimum change in noise figure of 10 dB as the failure criterion, failure levels have been determined as a function of pulse width, pulse repetition frequency, and the number of pulses applied. The two significant results obtained are that the 50-percent failure level is independent of pulse repetition rate at least up to 10 KHz and an empirical expression is derived which predicts these failure levels. This expression is proportional to the log of the pulse width times the number of pulses applied. An analysis of the susceptibility of a hypothetical system under an RF stress condition demonstrated use of the data.
- Electrical and Electronic Equipment