Dynamic Electric Field Profiles in Electron Beam Semiconductor Devices.
Research and development technical rept.,
ARMY ELECTRONICS COMMAND FORT MONMOUTH N J
Pagination or Media Count:
ICONDUCTOR Devices.Research and development technical rept.,Weiner,Maurice McGowan,Joseph W. ECOM-4110DA-1-S-662705-A-0551-S-662705-A-05502semiconductor devices, electric fields, electrical properties, electron beams, radiofrequency amplifiers, carrierssemiconductors, semiconductor diodeselectron beam semiconductor amplifiersThe dynamic electric field profiles in the depletion region of Electron Beam Semiconductor EBS devices have been obtained. A sinusoidal, density modulated beam is assumed. The profile results have been applied to the problem of finding the peak power limits in an EBS amplifier, operating Class A. The dynamic theory indicates departures from the semistatic theory in output power. The departures are most significant in a rolloff region caused partly or entirely by transit time effects. Author
- Electrical and Electronic Equipment