Electron Beam Semiconductor S-Band Amplifier.
Triannual rept. no. 2, 1 Nov 72-28 Feb 73,
WATKINS-JOHNSON CO PALO ALTO CALIF
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ON IRRADIATION, SILICON, DESIGN, SAND, RELIABILITYELECTRONICSELECTRON BEAM SEMICONDUCTOR AMPLIFIERSThe study of reliability and diode bonding techniques was continued. A designed analysis for semiconductor targets with 100 watts output at 3.2 GHz was carried out. Large signal calculation were made which included transit time and beam penetration effects. The sheet beam electron gun was tested with the pinhole target tube and beam current densities of 5.1 mAsq. mm at 15 kV were achieved at a gun to target distance of approximately six inches. The high power density heat exchanger design was refined. New S-band tuned circuit techniques were improved and an approximately 50 percent yield of void-free bonds between the semiconductor diodes and the target substrate can now be achieved. Life test Tube SN 1 and SN 2 were fabricated and preliminary testing was started. Modified author abstract
- Electrical and Electronic Equipment