S-Band Avalanche Diode Amplifiers.
Annual rept. 28 Jun 71-27 Jun 72,
MASSACHUSETTS INST OF TECH LEXINGTON LINCOLN LAB
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The report describes the RD work performed in fulfillment of an MIT contract for an S-band power amplifier, using a high-efficiency silicon avalanche diode. Both theoretical computer simulations and experimental device and circuit investigations were carried out. Modified author abstract
- Electrical and Electronic Equipment