Accession Number:

AD0763104

Title:

S-Band Avalanche Diode Amplifiers.

Descriptive Note:

Annual rept. 28 Jun 71-27 Jun 72,

Corporate Author:

MASSACHUSETTS INST OF TECH LEXINGTON LINCOLN LAB

Personal Author(s):

• Kawamoto,Hiro
• Prager,H. John

Report Date:

1972-07-31

Pagination or Media Count:

68.0

Abstract:

The report describes the RD work performed in fulfillment of an MIT contract for an S-band power amplifier, using a high-efficiency silicon avalanche diode. Both theoretical computer simulations and experimental device and circuit investigations were carried out. Modified author abstract

Descriptors:

• *MICROWAVE AMPLIFIERS
• *AVALANCHE DIODES
• S BAND
• SILICON
• POWER AMPLIFIERS
• MANUFACTURING
• THERMAL PROPERTIES

Subject Categories:

• Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE