Accession Number:

AD0762812

Title:

Boron Nitride Diffusion for LSI Processing

Descriptive Note:

Final rept.

Corporate Author:

PENNSYLVANIA STATE UNIV UNIVERSITY PARK

Personal Author(s):

Report Date:

1973-03-01

Pagination or Media Count:

67.0

Abstract:

The report describes the properties and behavior of boron nitride diffusion wafers for use in LSI processing. The results of the investigations conducted include the determination of proper handling procedures, B2O3 growth and volatilization kinetics, furnace parameters, and reliability and reproducibility.

Subject Categories:

  • Electrical and Electronic Equipment
  • Manufacturing and Industrial Engineering and Control of Production Systems

Distribution Statement:

APPROVED FOR PUBLIC RELEASE