Junction Capacitance Techniques to Characterize Radiation Damage in Silicon.
Physical sciences research papers,
AIR FORCE CAMBRIDGE RESEARCH LABS L G HANSCOM FIELD MASS
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Capacitance-voltage and transient capacitance measurements were made on Schottky barrier-on-phosphorus-doped silicon diodes. Energy levels, emission coefficients, and associated introduction rates were determined for defects produced by 1.0-MeV electrons, Co60-gamma rays, and 5-MeV neutrons. Total defect introduction rates agree well with carrier removal data of companion Hall effect samples. In the electron- and gamma-irradiated samples, specific introduction data reveal radiation-induced traps at Ec - 0.24 eV, Ec - 0.44 eV, and below midgap. The introduction rate of the traps located below midgap exhibits a strong dependence on donor concentration. In neutron-irradiated, float-zoned silicon a band of shallow trap levels is evident along with levels at Ec - 0.37 eV, Ec - 0.40 eV, and below midgap. In neutron-irradiated, crucible-grown silicon, trap levels are observed at Ec - 0.18 eV, Ec - 0.23 eV, Ec - 0.24 eV, Ec - 0.31 eV, and below midgap. Author
- Electrical and Electronic Equipment
- Radioactivity, Radioactive Wastes and Fission Products
- Solid State Physics