Accession Number:

AD0762482

Title:

Junction Capacitance Techniques to Characterize Radiation Damage in Silicon.

Descriptive Note:

Physical sciences research papers,

Corporate Author:

AIR FORCE CAMBRIDGE RESEARCH LABS L G HANSCOM FIELD MASS

Report Date:

1973-03-12

Pagination or Media Count:

38.0

Abstract:

Capacitance-voltage and transient capacitance measurements were made on Schottky barrier-on-phosphorus-doped silicon diodes. Energy levels, emission coefficients, and associated introduction rates were determined for defects produced by 1.0-MeV electrons, Co60-gamma rays, and 5-MeV neutrons. Total defect introduction rates agree well with carrier removal data of companion Hall effect samples. In the electron- and gamma-irradiated samples, specific introduction data reveal radiation-induced traps at Ec - 0.24 eV, Ec - 0.44 eV, and below midgap. The introduction rate of the traps located below midgap exhibits a strong dependence on donor concentration. In neutron-irradiated, float-zoned silicon a band of shallow trap levels is evident along with levels at Ec - 0.37 eV, Ec - 0.40 eV, and below midgap. In neutron-irradiated, crucible-grown silicon, trap levels are observed at Ec - 0.18 eV, Ec - 0.23 eV, Ec - 0.24 eV, Ec - 0.31 eV, and below midgap. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Radioactivity, Radioactive Wastes and Fission Products
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE