Development of (Hg,Cd)Te Elevated Temperature Photovoltaic Detectors.
Interim rept. Apr 72-Jan 73,
HONEYWELL RADIATION CENTER LEXINGTON MASS
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The report describes the results on the first phase of a development program to design and fabricate 5 micron Hg,CdTe photodiodes for 170K operation. The technique of ion implantation has been used to produce photodiodes exhibiting D starLambda values of 3 x 10 to the 10th power cm Hz to the 12 powerw at this temperature. The report describes the process and design considerations and predicted performance based on presently available material characteristics. Calculations show that in the 170K temperature range, the diode saturation current determines the achievable performance. Details of the characterization of the detectors and experimental areas for investigation in the second phase are discussed. Author
- Electrical and Electronic Equipment
- Infrared Detection and Detectors
- Solid State Physics