Lead-Tin-Chalcogenide Detector Substrate Development.
Final rept. 16 Jun 71-31 Jan 73,
XEROX ELECTRO-OPTICAL SYSTEMS PASADENA CALIF
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The objective of this program was the development of technology necessary to provide high quality, single crystalline, lead-tin-telluride PbSnTe materials grown by vapor-phase epitaxy for ultimate use in the fabrication of infrared detectors and detector arrays. Work was performed in the following two major areas 1 growth of large PbSnTe ingots by closed-tube epitaxy, and 2 growth of PbSnTe layers by open-tube epitaxy. Author
- Electrical and Electronic Equipment
- Infrared Detection and Detectors
- Solid State Physics