Free-Carrier Optical Effects in Gallium Arsenide.
Physical sciences research papers,
AIR FORCE CAMBRIDGE RESEARCH LABS L G HANSCOM FIELD MASS
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Computational techniques are discussed for determining lattice and free carrier parameters of materials from frequency dependent infrared optical reflectivity. Classical oscillator theory is applied to the analysis of lattice vibration reflectivity spectrum of YAG. Reflectance data of heavily doped, electron irradiated, and neutron irradiated gallium arsenide is interpreted in terms of superposition of lattice vibration and free carrier absorption mechanisms. The free carrier conductivity is derived from the Boltzman transport equation, and disagreements between computations and experimental results are discussed. The technique of determining the free carrier parameters from the reflectivity plasma minimum is evaluated. It is also shown that the energy dependent scattering relaxation time formalism does not result in any improved fit to experimental data. Author
- Solid State Physics