Mercury Cadmium Telluride 10.6-Micron Photodiode.
Semiannual rept. 15 Nov 71-15 Jul 72,
HONEYWELL RADIATION CENTER LEXINGTON MASS
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Improvements have been made in the mercury diffusion fabrication process technology required for sensitive, high speed n on p mercury-cadmium-telluride Hg,CdTe photodiode detectors that operate at 77K. Effort has been directed toward the investigation of surface p doping, zinc sulfide ZnS coating, diffusion masking, ion implantation, bulk material evaluation and annealing. An analysis of transit time effects has shown that p-type Hg,CdTe substrate material produces diodes with frequency response a factor of 50 better than n-type Hg,CdTe. Therefore, the prime approach for high frequency diodes will pursue n on p structures. Other selection criteria for substrate material have been determined as crystal perfection, 10 to the 17th power holescc p-type with low donor concentration, and minority carrier diffusion length greater than 10 microns. Successful results at surface passivation have been made with surface doping and ZnS coatings. Modified author abstract
- Electrical and Electronic Equipment
- Infrared Detection and Detectors