Millimeter Wave Image Conversion Panels.
Semiannual rept. 1 Apr-30 Sep 72,
HUGHES RESEARCH LABS MALIBU CALIF
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P SEMICONDUCTOR IMAGE DISSECTING PANELS FOR MM WAVE IMAGING IS DESCRIBED. A description is given of a new mechanical assembly design that will simplify the construction of these panels. This design uses a polystyrene lens as the basic supporting structure on which the preassembled and pretested panel elements are mounted. Diode development work is also described. It has led to diodes in which the bulk resistivity can be changed from 3000 ohms-cm to about 5 ohms-cm by the application of a forward bias of 0.5 Asq cm. These p-i-n diodes have an Al-alloy p region and an As-ion implanted n region with Pt-Si-Ti-Pt-Au for contacting metallization. They are capable of providing 30 db rf modulation in image conversion panel applications. Author
- Electrical and Electronic Equipment