Study of Heterojunction Pb(1-x)Sn(x)Te Diodes.
NAVAL POSTGRADUATE SCHOOL MONTEREY CALIF
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A new procedure of using metal rich Pb1-xSnx1Te alloy source in a graphite boat deposition method has been developed in preparing n-type Pb0.8Sn0.2Te thin films of carrier concentration in the low 10 to the 17th powercc range without annealing. Using this procedure, single heterojunction Pb1-xSnxTe diodes have been made by sequential depositions of p-type Pb0.86Sn0.14Te and n-type Pb0.80Sn0.20Te thin films on cleaved 100 KCL substrates. Diodes were made by using gold deposition and silver epoxy contacts. Rectifying diodes of R sub oA values as high as 600 ohm-sq cm have been obtained. A theoretical analysis was carried out in calculating the laser performance of a double heterojunction Pb1-xSnxTe diodes. Its results will be used as guidelines for continuing experimental research and development. Author
- Electrical and Electronic Equipment
- Lasers and Masers