Accession Number:

AD0761510

Title:

Study of PbTe, PbSnTe, PbSe, PbSnSe, and Ge Metal Insulator Semiconductor (MIS) Structures.

Descriptive Note:

Master's thesis,

Corporate Author:

NAVAL POSTGRADUATE SCHOOL MONTEREY CALIF

Personal Author(s):

Report Date:

1973-03-01

Pagination or Media Count:

173.0

Abstract:

A thorough understanding and a well developed fabrication procedure of MIS structures are the prerequisite for charged coupled device applications. The object of this thesis is to study the narrow gap semiconductor MIS and investigate its feasibility for IR-charge coupled images applications. Two MIS studies were made. First, MIS of five lead-tin semiconductors were fabricated using E-gun evaporated 100-450A thick Al2O3 or SiO2 layers as insulators. Second, MIS of 0.05ohm-cm p-type and 40ohm-cm n-type Ge were also studied. In addition, effects of electron bombardment simulating the space environment around Jupiter on a n-channel depletion MOSFET were studied. Modified author abstract

Subject Categories:

  • Electrical and Electronic Equipment
  • Infrared Detection and Detectors
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE