Accession Number:

AD0761486

Title:

Device Implications of Ion Implantation Damage in Silicon,

Descriptive Note:

Corporate Author:

AIR FORCE CAMBRIDGE RESEARCH LABS L G HANSCOM FIELD MASS

Personal Author(s):

Report Date:

1973-04-30

Pagination or Media Count:

7.0

Abstract:

Thermal stimulated current and diode recovery measurements are presented for ion implanted silicon. The results are used to evaluate device possibilities such as bipolar transistors and hyperabrupt diodes where control of implantation damage is critical. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Radioactivity, Radioactive Wastes and Fission Products
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE