Feasibility Study of Pb(1-x)Sn(x)Te Charge Coupled Devices for Infrared Imaging Applications.
NAVAL POSTGRADUATE SCHOOL MONTEREY CALIF
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The purpose of this research was to examine the feasibility of narrow-gap semiconductor charged coupled devices for infrared imaging applications. The semiconductors considered are PbTe for a three to five micron imager and Pb0.76Sn0.24Te for an eight to 12 micron imager, both operated at a temperature of 85K. Theoretical calculations of signal current and storage time are made based on the metal-insulator-semiconductor theory developed for silicon MIS devices. Experimental studies of Pb1-xSnxTe MIS were made which demonstrated that accumulation, depletion, and inversion layers can be controlled by gate voltage, following the general behavior of silicon MIS devices. A PbTe charged coupled device CCD infrated imager seems feasible. Feasibility of Pb0.76Sn0.24Te CCDs will require significant improvements in material and fabrication technology to increase storage time and reduce dark current. Modified author abstract
- Electrical and Electronic Equipment
- Infrared Detection and Detectors
- Solid State Physics