Accession Number:

AD0761394

Title:

Diffusion of Ion-Implanted 85Kr in KCl Including the Effects of Channeling. Radiation Damage, and Divalent Doping,

Descriptive Note:

Corporate Author:

MCMASTER UNIV HAMILTON (ONTARIO) INST FOR MATERIALS RESEARCH

Personal Author(s):

Report Date:

1971-11-26

Pagination or Media Count:

13.0

Abstract:

An expanded study of the diffusion of ion-implanted 85Kr in KCl has been undertaken with improved analytical and experimental techniques. These include an analysis of diffusion profiles, separation of the effects of radiation damage from those of the normal lattice by chemically stripping the damaged region, and use of specimens which are doped with CaCl2. Diffusion coefficients are examined in the context of diffusion theory where D is assumed, in the case of unstripped samples, to have the following spatial variation D D11cx to the 43 power for 0 or x or a, and D D11ca to the 43 power for or a. Modified author abstract

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE