Faraday Rotation and Attenuation in InSb in the 10.6 Micron Wavelength Region,
Final rept. 15 May-15 Nov 72,
CASE WESTERN RESERVE UNIV CLEVELAND OHIO DIV OF ELECTRICAL ENGINEERING AND APPLIED PHYSICS
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The investigation examined the dependence of free carrier Faraday Rotation on dopant nature and concentration and on crystal orientation. The extent of rotation varies linearly with free carrier concentration. The wavelength dependence of absorption and Faraday rotation in the 10.6 microns wavelength region was measured. In addition to the effect of the tail of the interband effect and the free carrier effects, there were secondary structural details which could not be identified with any other plausible mechanism except that of deep donor levels due to donors at interstitial points. Wafers which were further lapped to reduce wafer thickness and were subsequently polished showed secondary structure of this nature to a greater degree than otherwise.
- Lasers and Masers
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