Electron Beam Semiconductor Short Pulse Generator.
Final rept. 1 Aug 70-1 Oct 72,
WATKINS-JOHNSON CO PALO ALTO CALIF
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MPLIFIER FOR A HIGH-SPEED HIGH-CURRENT SWITCHING APPLICATION HAS BEEN COMPLETED. A large-signal computer simulation predicts that with an ideal diode structure over 450 amperes of output current can be achieved into an 0.5 ohm load with a risetime of less than 0.7 nanosecond. A gridded gun design was used as the most suitable approach. The cathode-grid structure showed over 80 percent of the design goal performance with uniform current density at the target position. Large area semiconductor targets of 0.35 sq. cm. and 1.40 sq. cm. active area have been successfully fabricated from 37 micrometers thick, 22 ohmcm epitaxial silicon. The best diodes have leakage currents of less than 10 mA at 250 volts reverse breakdown voltage. Tube processing and pulsed operation did not change the diode characteristics. Modified author abstract
- Electrical and Electronic Equipment