Accession Number:

AD0761111

Title:

Electron Beam Semiconductor Short Pulse Generator.

Descriptive Note:

Final rept. 1 Aug 70-1 Oct 72,

Corporate Author:

WATKINS-JOHNSON CO PALO ALTO CALIF

Personal Author(s):

Report Date:

1973-05-01

Pagination or Media Count:

91.0

Abstract:

MPLIFIER FOR A HIGH-SPEED HIGH-CURRENT SWITCHING APPLICATION HAS BEEN COMPLETED. A large-signal computer simulation predicts that with an ideal diode structure over 450 amperes of output current can be achieved into an 0.5 ohm load with a risetime of less than 0.7 nanosecond. A gridded gun design was used as the most suitable approach. The cathode-grid structure showed over 80 percent of the design goal performance with uniform current density at the target position. Large area semiconductor targets of 0.35 sq. cm. and 1.40 sq. cm. active area have been successfully fabricated from 37 micrometers thick, 22 ohmcm epitaxial silicon. The best diodes have leakage currents of less than 10 mA at 250 volts reverse breakdown voltage. Tube processing and pulsed operation did not change the diode characteristics. Modified author abstract

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE