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Sputtered Thin Film Research
Semi-annual technical rept. no. 2, 16 Oct 1972-15 Apr 1973
UNITED AIRCRAFT RESEARCH LABS EAST HARTFORD CT
Pagination or Media Count:
Current progress toward establishing the feasibility of reactive rf sputtering as a means of preparing single crystal films suitable for integrated optics and electronics applications is discussed. Single crystal films of aluminum nitride, zinc oxide, rutile and gallium arsenide have been successfully grown by this technique. Epitaxy of aluminum nitride and zinc oxide has been obtained on 0001 and 1,-1,0,2 sapphire substrates, rutile on 1,-1,0,2 sapphire and gallium arsenide on semi-insulating substrates of gallium arsenide. Surface acoustic wave delay lines were fabricated to evaluate the piezoelectric qualities of the zinc oxide and aluminum nitride films. The piezoelectric coupling coefficients determined indicate that the quality of the sputtered films is comparable to the best results reported for films prepared by chemical vapor deposition.
APPROVED FOR PUBLIC RELEASE