EBS Diode Arrays.
Final rept. 10 Jul 72-10 Feb 73,
NORTHROP RESEARCH AND TECHNOLOGY CENTER HAWTHORNE CALIF
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ECOM0286-Felectron tube targets, semiconductor diodes, design, silicon, electron irradiation, gain, electrical properties, damage, radiation effects, manufacturing, test methodsequivalent circuitsThe objective of the study was to determine methods of fabricating an array of silicon diodes for application in an electron beam semiconductor device. Diode array lateral dimensions were defined in the procurement specification. Poly silicon and phosphorous glass passivation layers were evaluated for their effects on the diode reverse characteristics under electron bombardment. Several of the 10 diode arrays were fabricated, tested and evaluated. Recommendations for making contacts to the top and bottom metal layers were also made. Ten diode arrays meeting the specified parameters were delivered to USAECOM for evaluation and use. Author
- Electrical and Electronic Equipment