Accession Number:

AD0760602

Title:

EBS Diode Arrays.

Descriptive Note:

Final rept. 10 Jul 72-10 Feb 73,

Corporate Author:

NORTHROP RESEARCH AND TECHNOLOGY CENTER HAWTHORNE CALIF

Personal Author(s):

• Schuegraf,Klaus K.

Report Date:

1973-05-01

Pagination or Media Count:

56.0

Abstract:

ECOM0286-Felectron tube targets, semiconductor diodes, design, silicon, electron irradiation, gain, electrical properties, damage, radiation effects, manufacturing, test methodsequivalent circuitsThe objective of the study was to determine methods of fabricating an array of silicon diodes for application in an electron beam semiconductor device. Diode array lateral dimensions were defined in the procurement specification. Poly silicon and phosphorous glass passivation layers were evaluated for their effects on the diode reverse characteristics under electron bombardment. Several of the 10 diode arrays were fabricated, tested and evaluated. Recommendations for making contacts to the top and bottom metal layers were also made. Ten diode arrays meeting the specified parameters were delivered to USAECOM for evaluation and use. Author

Descriptors:

• *ELECTRON TUBE TARGETS
• *SEMICONDUCTOR DIODES
• SILICON
• ELECTRON IRRADIATION
• GAIN
• DAMAGE
• RADIATION EFFECTS
• MANUFACTURING
• TEST METHODS

Subject Categories:

• Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE