Accession Number:

AD0760595

Title:

Optical and Electrical Properties of Amorphous Elemental Semiconductors

Descriptive Note:

Semi-annual technical rept.

Corporate Author:

MARYLAND UNIV COLLEGE PARK DEPT OF PHYSICS AND ASTRONOMY

Personal Author(s):

• Glover , III., Rolfe E.
• Glosser, Robert

Report Date:

1972-12-31

Pagination or Media Count:

13.0

Abstract:

The authors report results of electrical and optical measurements on amorphous silicon and germanium. It was found that the electrical and optical properties of amorphous silicon can be explained by a model in which internal surfaces or voids have electronic states corresponding to those found on cleaned crystalline surfaces. The results on amorphous germanium deposited at 4K show an absorption edge of 0.36 eV and parabolic behavior over a large range of energies. This is to be compared with the behavior of films deposited at 300K which shows a threshold of 0.85 eV and a deviation from parabolic behavior around 1 eV.

Descriptors:

• *GERMANIUM
• *SEMICONDUCTORS
• *SILICON
• ANNEALING
• ELECTRICAL CONDUCTIVITY
• ELECTRICAL PROPERTIES
• ELECTRON PARAMAGNETIC RESONANCE
• OPTICAL PROPERTIES
• SEMICONDUCTING FILMS

Subject Categories:

• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE