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An Experimental Study of Noise in MNOSFET Devices.
Phase completion rept.,
CLARKSON COLL OF TECHNOLOGY POTSDAM N Y DEPT OF ELECTRICAL AND COMPUTER ENGINEERING
Pagination or Media Count:
The theory of the operation of metal-nitride-oxide-semiconductor field effect transistors MNOSFETs is briefly presented, as is the theory of noise in metal-insulator-semiconductor field effect transistors MISFETs. The noise theory, as developed for a MISFET device, shows the noise to be dependent upon both the gate-to-source voltage and the threshold voltage. Since a MNSOFET device is a variable thresholding device, it is probable that the noise of such a device would be dependent upon the state of the device. Indeed, this has been shown to be the case. An experimental investigation of the noise of the MNOSFET device is accomplished using a digital spectral analysis measurement system. The measurement system is based upon a digital correlation analysis followed by a computation of a fast Fourier transformation in order to obtain the noise power spectrum. Author
APPROVED FOR PUBLIC RELEASE