Accession Number:

AD0760171

Title:

Plasma Anodization.

Descriptive Note:

Final rept. 21 Jun 71-20 Jun 72,

Corporate Author:

BRITISH COLUMBIA UNIV VANCOUVER DEPT OF ELECTRICAL ENGINEERING

Personal Author(s):

• Pulfrey,David L.
• Young,Lawrence
• Olive,Graham

Report Date:

1972-11-01

Pagination or Media Count:

50.0

Abstract:

The process of plasma anodization has been investigated using two systems. The first was a cold cathode dc discharge system replacing apparatus described in our earlier reports with automated ellipsometry to continuously follow the growth of the oxide. The second system employed an r.f. discharge with growth of the oxide being followed by monitoring the intensity reflectivity of s-light from a HeNe laser. Experiments are described which indicate that negative oxygen ions form the plasma are not directly involved in the growth of oxides on tantalum in a d.c. discharge. Also reported are data on the thickness-and temperature-dependence of the relation between oxide field and oxide growth rate for the case of Si anodization in an r.f. dicharge. Author

Descriptors:

• *ANODIC COATINGS
• *DIELECTRIC FILMS
• PLASMAS(PHYSICS)
• PLASMAS(PHYSICS)
• TANTALUM
• NIOBIUM
• SILICON DIOXIDE
• THIN FILM STORAGE DEVICES
• CANADA

Subject Categories:

• Coatings, Colorants and Finishes

Distribution Statement:

APPROVED FOR PUBLIC RELEASE