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Final rept. 21 Jun 71-20 Jun 72,
BRITISH COLUMBIA UNIV VANCOUVER DEPT OF ELECTRICAL ENGINEERING
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The process of plasma anodization has been investigated using two systems. The first was a cold cathode dc discharge system replacing apparatus described in our earlier reports with automated ellipsometry to continuously follow the growth of the oxide. The second system employed an r.f. discharge with growth of the oxide being followed by monitoring the intensity reflectivity of s-light from a HeNe laser. Experiments are described which indicate that negative oxygen ions form the plasma are not directly involved in the growth of oxides on tantalum in a d.c. discharge. Also reported are data on the thickness-and temperature-dependence of the relation between oxide field and oxide growth rate for the case of Si anodization in an r.f. dicharge. Author
APPROVED FOR PUBLIC RELEASE