Resistivity and Carrier Lifetime in Gold-Doped Silicon.
Final rept. 1 Jan-31 Dec 72,
NATIONAL BUREAU OF STANDARDS WASHINGTON D C INST FOR APPLIED TECHNOLOGY
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The report describes the current status of a continuing study of the electrical properties of gold-doped silicon. Room Temperature resistivity and Hall effect measurements were made on many sets of gold-diffused boron- or phosphorus-doped silicon wafers for a wide range of initial resistivities of both types. The general suitability of the proposed model was verified although an apparent discrepancy still remains between total and electrically active gold as confirmed by resistivity data as a function of gold density for phosphorus-doped silicon. Electrical measurements were made to study the activation energies of the gold donor and acceptor. In addition the activation energy of the gold-coupled shallow acceptor in the proposed model was observed. Modified author abstract
- Solid State Physics