Accession Number:

AD0760136

Title:

Characteristics of Impatt Diode Reflection Amplifiers.

Descriptive Note:

Technical rept.,

Corporate Author:

MICHIGAN UNIV ANN ARBOR ELECTRON PHYSICS LAB

Personal Author(s):

• Laton,R. W.

Report Date:

1973-03-01

Pagination or Media Count:

192.0

Abstract:

IUM ARSENIDES, DOPING, PHASE SHIFT CIRCUITS, DESIGN, THESESIMPATT DIODESThe purpose of this study is to investigate the gain, stability, power saturation and bandwidth properties of microwave reflection amplifiers which employ IMPATT diodes as the active element, together with the dependence of all these properties upon device material, doping profile and operating conditions. The investigation provides a method for the design of stable negative-resistance amplifiers and an understanding of the limitations imposed on such amplifiers when the active device is an IMPATT diode. Data are presented which indicates that power addition, gain saturation and bandwidth are all optimized by devices with narrow avalanche widths, high current densities and low temperatures. Author Modified Abstract

Descriptors:

• *MICROWAVE AMPLIFIERS
• AVALANCHE DIODES
• GAIN
• STABILITY
• BANDWIDTH
• SILICON
• GALLIUM ARSENIDES
• DOPING
• PHASE SHIFT CIRCUITS
• THESES

Subject Categories:

• Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE