Investigation of the Properties of Thin Insulating Films Deposited with an Ion Beam System.
Final rept. 1 May-31 Jul 72,
WHITTAKER CORP WALTHAM MASS SPACE SCIENCES DIV
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A preliminary study is described wherein thin film insulators deposited with a unique ion beam deposition system were investigated for radiation resistance. Metal-insulator-semiconductor structures were fabricated and used to evaluate both an insulating carbon film and ion beam deposited Al2O3 films. I-V and C-V measurements are described for both types of materials for eventual application in field effect devices. These showed little shift in flat-band voltage under irradiation, however, some surface charge effects require further study. Author
- Electrical and Electronic Equipment
- Solid State Physics