Investigations of Metal-Buried Silicide-Silicon Structures and Metal-Titanium Oxide-Silicon Structures.
NEW MEXICO UNIV ALBUQUERQUE BUREAU OF ENGINEERING RESEARCH
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Various MIS metal-insulator-semiconductor capacitors were fabricated on single-crystal silicon substrates. Widely differing insulator-material films and processing techniques were used in the construction of these capacitors. These MIS structures were used as test vehicles in several investigations of selected practical and theoretical problems of present engineering interest. Electrical and physical characterizations of these systems are presented along with some modeling of insulator-film bulk properties and properties of the insulator-semiconductor interface regions. Also presented are the chemical, physical, and photolithographic processing methods used in the construction of these MIS structures. Author Modified Abstract
- Electrical and Electronic Equipment
- Radioactivity, Radioactive Wastes and Fission Products