Electron Beam Semiconductor S-Band Amplifier.
Triannual rept. no. 1, 1 Jul-31 Oct 72,
WATKINS-JOHNSON CO PALO ALTO CALIF
Pagination or Media Count:
ILICON, DESIGN, S BANDELECTRON BEAM SEMICONDUCTOR AMPLIFIERSThe design analysis for the semiconductor target was carried out. Large signal calculations were carried out which included transit time and deep junction effects. The first pinhole target tube was built and measurements were made on a sheet electron beam produced by the four anode gun. Redesign of the pinhole masks of the target mount was undertaken to give CW operating capability. Design, construction and testing of heat exchangers for the high power density target mount was undertaken. Based upon test results, and improved heat exchanger design was conceived and built, but not tested by the end of the period. Study of diode bonding techniques took place with a goal of obtaining completely void free bonds between the semiconductor diodes and the target substrate. Author
- Electrical and Electronic Equipment