Accession Number:

AD0759946

Title:

Radiation Effects on Semiconductor Materials and Devices.

Descriptive Note:

Final rept. 8 Feb-8 Dec 72,

Corporate Author:

NORTHROP RESEARCH AND TECHNOLOGY CENTER HAWTHORNE CALIF

Personal Author(s):

• Srour,Joseph R.
• Othmer,Siegfried
• Curtis,Orlie L. , Jr

Report Date:

1973-03-01

Pagination or Media Count:

210.0

Abstract:

E, SEMICONDUCTORS, DAMAGE, RECOMBINATION REACTIONS, CARRIERSSEMICONDUCTORS, CRYSTAL DEFECTS, SILICON, NEUTRON REACTIONS, ANNEALING, SOLAR CELLS, GALLIUM ARSENIDES, GAMMA RAYS, PHOTOCONDUCTIVITY, UPHOTOCONDUCTIVITYTechniques are described for obtaining recombination-center parameters from carrier lifetime studies. Studies of recombination at disordered regions include damage comparisons for fusion- and fission-neutron-irradiated bulk silicon and silicon solar cells, and diffusion length measurements in neutron-irradiated silicon and gallium arsenide. Short-term annealing investigations include the development of expressions for evaluating early-time damage ratios and studies of transient recovery in bulk silicon, silicon solar cells, and bipolar transistors following bursts of both 14-MeV and reactor neutrons. Measurement techniques are described for determining drift mobility in heavily irradiated silicon and for determining the injection-level dependence of lifetime in semiconductors.

Descriptors:

• *DAMAGE
• DAMAGE
• RECOMBINATION REACTIONS
• CHARGE CARRIERS
• CRYSTAL DEFECTS
• SILICON
• NEUTRON REACTIONS
• ANNEALING
• SOLAR CELLS
• GALLIUM ARSENIDES
• GAMMA RAYS
• PHOTOCONDUCTIVITY
• PHOTOCONDUCTIVITY

Subject Categories:

• Electrical and Electronic Equipment
• Radioactivity, Radioactive Wastes and Fission Products
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE