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Radiation Effects on Semiconductor Materials and Devices.
Final rept. 8 Feb-8 Dec 72,
NORTHROP RESEARCH AND TECHNOLOGY CENTER HAWTHORNE CALIF
Pagination or Media Count:
E, SEMICONDUCTORS, DAMAGE, RECOMBINATION REACTIONS, CARRIERSSEMICONDUCTORS, CRYSTAL DEFECTS, SILICON, NEUTRON REACTIONS, ANNEALING, SOLAR CELLS, GALLIUM ARSENIDES, GAMMA RAYS, PHOTOCONDUCTIVITY, UPHOTOCONDUCTIVITYTechniques are described for obtaining recombination-center parameters from carrier lifetime studies. Studies of recombination at disordered regions include damage comparisons for fusion- and fission-neutron-irradiated bulk silicon and silicon solar cells, and diffusion length measurements in neutron-irradiated silicon and gallium arsenide. Short-term annealing investigations include the development of expressions for evaluating early-time damage ratios and studies of transient recovery in bulk silicon, silicon solar cells, and bipolar transistors following bursts of both 14-MeV and reactor neutrons. Measurement techniques are described for determining drift mobility in heavily irradiated silicon and for determining the injection-level dependence of lifetime in semiconductors.
APPROVED FOR PUBLIC RELEASE