Accession Number:

AD0759786

Title:

A Unique High-Temperature, High-Pressure Crystal Growth System for Silicon Carbide.

Descriptive Note:

Instrumentation papers,

Corporate Author:

AIR FORCE CAMBRIDGE RESEARCH LABS L G HANSCOM FIELD MASS

Report Date:

1973-01-24

Pagination or Media Count:

17.0

Abstract:

A high-pressure, high-temperature furnace system is described for crystal growth experiments using crucibles up to 13 cm in diameter and 26 cm high. The vertical temperature gradient is electronically controlled during growth such that the ends of the crucible can be maintained at temperatures above or below the crucible center. Temperatures up to 2800C can be maintained at pressures up to 50 atmospheres. A vacuum capability up to .000001 torr at 1800C has been incorporated into the system. Single crystals of alpha silicon carbide grown in this system at 2600C are described to illustrate its use. Author

Subject Categories:

  • Test Facilities, Equipment and Methods
  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE