AC Hall Mobility and Electrical Conductivity in Amorphous Threshold Switching Semiconductors
NAVAL ORDNANCE LAB WHITE OAK MD
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Hall mobility measurements were made on bulk samples of the amorphous threshold switching compositions As34.5 Te27.9 Ge15.6 S22.0 and As35 Te40 Ge7 Si18 at frequencies from 10 to 100 kHz and at several temperatures between 220 and 250 K. The measurements were performed using a special Corbino disc apparatus designed for high resistance samples. A very high Hall mobility, which is an oscillatory, temperature dependent function of frequency, was found in both compositions, although it is not identical in the two materials. The frequency dependence was verified using a modified van der Pauw technique, which also demonstrated that the high mobilities correspond to positive carriers.
- Solid State Physics