Accession Number:

AD0758973

Title:

An Isotropic Redistribution of Current Carriers near a Charged Semiconductor Surface,

Descriptive Note:

Corporate Author:

ARMY FOREIGN SCIENCE AND TECHNOLOGY CENTER CHARLOTTESVILLE VA

Personal Author(s):

Report Date:

1973-03-13

Pagination or Media Count:

21.0

Abstract:

An isotropic redistribution of carriers APN occurs when the current passes through the model near the semiconductor surface with several types of current carriers with different anisotropic mobility. These can be electrons and holes in a bipolar semiconductor, electrons from various troughs in a multitrough semiconductor, or electrons with different energies in a single trough semiconductor, situated in the magnetic field. APN in unipolar semiconductors leads to dimensional effects in electroconductivity and galvanomagnetic phenomena and also influences their photoelectric properties. In all the cases mentioned above, an important parameter in the theory is the surface relaxation velocity of the corresponding imbalance. The authors show that in semiconductors such a description is only satisfactory in the case of an impoverished or slightly enriched surface. Author Modified Abstract

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE