Gating Transistor Module for Night Vision Laboratories.
Final rept. 7 Apr 67-7 Jun 68,
TRW SEMICONDUCTORS INC LAWNDALE CALIF RESEARCH AND DEVELOPMENT DEPT
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This was a two part task, to increase the breakdown voltage in a single junction switching transistor and to reduce the size and weight of the packaged group of these junctions for a given high voltage gating function. The device design was a compromise between breakdown voltage, the switching speed, and peak current carrying capability. The packaging is the application of TRWS molding capability to produce a single junction configuration and then the multiple junction module.
- Electrical and Electronic Equipment