Evaluation of Semiconductor Device Analysis Using the Net-2 Computer Program
Final rept. Feb-Oct 1972
NORTHROP RESEARCH AND TECHNOLOGY CENTER PALOS VERDES PENINSULA CA
Pagination or Media Count:
SMETAL OXIDE SEMICONDUCTORS, CDC 6600 COMPUTERS, TRANSIENT RADIATION EFFECTSELECTRONICSAn evaluation of the capability of the NET-2 CircuitSystem Analysis Computer Program to perform analysis of radiation effects on complex semiconductor devices and microcircuits is presented. The mathematical models considered include both the terminal built-in models and Linvill lumped models of bipolar and MOS devices. Computations of electrical performance and transient radiation-induced response are performed and compared to available exact results. The derivation of complex models for the elements of a junction- isolated bipolar microcircuit including the multiple emitter transistor is demonstrated as well as the analysis of a complete junction-isolated TTL Gate microcircuit. NET-2 capabilities in terms of computer run times, numbers of circuit elements allowed, and accuracy of solution are discussed. Device analysis examples include a p-n junction diode and an intrinsic lumped model p- n-p transistor.
- Electrical and Electronic Equipment
- Computer Programming and Software
- Radioactivity, Radioactive Wastes and Fission Products