Radiation Damage and Defects in Semiconductors.
Final rept. 1 Apr 72-31 Mar 73,
READING UNIV (ENGLAND) DEPT OF PHYSICS
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The report presents the proceedings of International Conference on Defects in Semiconductors, consisting of 54 articles showing recent research results on the production and properties of lattice defects in semiconductors. As in the previous meetings of this bi-annual series, emphasis was on electron and neutron damage in silicon, gallium arsenide and germanium, closely followed by ion implantation defect studies. Interest in the other III-V and II-VI compounds has increased. Reported use of special techniques includes electron microscopy, channeling, local vibrational modes, electron spin resonance and Mossbauer effect. Author
- Radioactivity, Radioactive Wastes and Fission Products
- Solid State Physics