Accession Number:

AD0758695

Title:

Oxide Charge Trapping Induced by Ion Implantation Displacement Damage.

Descriptive Note:

Technical rept.,

Corporate Author:

PRINCETON UNIV N J SOLID STATE AND MATERIALS LAB

Personal Author(s):

Report Date:

1973-04-16

Pagination or Media Count:

10.0

Abstract:

Measurements have been made on the effects of ion implantation displacement damage and subsequent thermal annealing on charge transport and trapping within the SiO2 insulator of an MIS capacitor. Internal photoemission, current-voltage and capacitance-voltage measurements have been made in the temperature range between 80 and 300K. Prolonged thermal annealing was found to remove trap levels detectable with internal photoemission techniques but still left greater densities of electron traps in the oxide than those characteristic of unimplanted samples. These traps had an asymmetric spatial distribution within the oxide and may partially compensate for hole trapping under ionizing radiation and consequently be responsible for the improved radiation hardness reported for implanted MIS devices. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Radioactivity, Radioactive Wastes and Fission Products
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE