Thin Film Pb(0.9)Sn(0.1)Se Photoconductive Infrared Detectors, Metallurgical and Electrical Measurements.
NAVAL POSTGRADUATE SCHOOL MONTEREY CALIF
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Pb0.9Sn0.1Se thin films were deposited onto cleaved 111 CaF2 and BaF2 substrates by either an open one-boat evaporation method or a Knudson type graphite boat method. Photoconductivity was observed after isothermal annealing in PbSn rich vapor to reduce their carrier concentrations to the mid-10 to the 16th power to mid-10 to the 17th power range. At 100K, 500K blackbody responsivities up to 60VW have been developed, compared with the best blackbody responsivities around 100-125 VW reported for commercial photo-voltaic detectors of Pb1-xSnxTe operated at 77K. Author Modified Abstract
- Electrical and Electronic Equipment
- Infrared Detection and Detectors