Accession Number:

AD0758519

Title:

Thin Film Pb(0.9)Sn(0.1)Se Photoconductive Infrared Detectors, Metallurgical and Electrical Measurements.

Descriptive Note:

Master's thesis,

Corporate Author:

NAVAL POSTGRADUATE SCHOOL MONTEREY CALIF

Personal Author(s):

Report Date:

1972-12-01

Pagination or Media Count:

88.0

Abstract:

Pb0.9Sn0.1Se thin films were deposited onto cleaved 111 CaF2 and BaF2 substrates by either an open one-boat evaporation method or a Knudson type graphite boat method. Photoconductivity was observed after isothermal annealing in PbSn rich vapor to reduce their carrier concentrations to the mid-10 to the 16th power to mid-10 to the 17th power range. At 100K, 500K blackbody responsivities up to 60VW have been developed, compared with the best blackbody responsivities around 100-125 VW reported for commercial photo-voltaic detectors of Pb1-xSnxTe operated at 77K. Author Modified Abstract

Subject Categories:

  • Electrical and Electronic Equipment
  • Infrared Detection and Detectors

Distribution Statement:

APPROVED FOR PUBLIC RELEASE