Advanced Concepts of Microwave Generation and Control in Solids.
Quarterly technical rept. no. 8, 1 Jul-30 Sep 72,
CORNELL UNIV ITHACA N Y SCHOOL OF ELECTRICAL ENGINEERING
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MADE DURING THE EIGHTH QUARTERLY PERIOD OF A SOLID STATE MICROWAVE OSCILLATOR AND AMPLIFIER RESEARCH AND DEVELOPMENT PROGRAM. Included are the results of studies of transferred electron, punch-through injection, and avalanche diodes and solid state materials. Discussed first are a summary of LSA diode and circuit research at Cornell, research on thin LSA devices, a PCM Gunn oscillator, and InP materials studies. Next discussed are high average power TRAPATT diode structures, research on GaAs Schottky barrier avalanche diodes and research on high frequency TRAPATT oscillators. Also reported are two studies of punch-through injection Baritt diodes, one for high frequency CW operation and the other for low frequency CW operation. Work on microwave transistors is reported along with a review of progress, on an oscillator power combiner and IMPATT diode reflection amplifier. The report concludes with a discussion of the progress made on ion implantation, on vacuum epitaxial growth in silicon on ionization rates in GaAs, and on a microwave monolithic integrated circuit study. Author
- Electrical and Electronic Equipment
- Solid State Physics