Measurements of Excess Carriers in Intrinsic Germanium.
ARMY ELECTRONICS COMMAND FORT MONMOUTH N J
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XCESS CARRIER DENSITIES INJECTED INTO THE INTRINSIC REGION OF PIN diodes with large geometry. It was found that absorption of the infrared beam decreased linearly as a function of distance into the I-region, leveled off, and then increased linearly with distance as the other junction was approached when the diode was biased in the forward direction. The linear absorption behavior is explained by equations relating absorption to density and density as a function of distance. This is supported by a semiquantitative analysis. The use of a PIN diode as a 10.6 micrometer beam modulator is suggested with consideration of limiting factors, such as the length of the intrinsic region, percentage of modulation, and the role of carrier lifetime in the design of such devices. Author
- Solid State Physics