Study of Transient Radiation Effects on a Monolithic Integrated Circuit Ferrite Phase Shifter Driver.
Research and development technical rept.,
ARMY ELECTRONICS COMMAND FORT MONMOUTH N J
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1-S-662703-A-44002phase shift circuits, failureelectronics, integrated circuits, damage, ferrites, semiconductor devices, electrical properties, gamma rays, test methods, utest methodslarge scale integrated circuits, metal oxide semiconductors, schematic diagrams, transient radiation effectselectronicsA study was performed to determine the permanent performance degradation due to transient radiation on a ferrite phase shifter driver circuit. The driver circuit contained two types of monolithic integrated circuits--a large scale integration LSI P-channel metal-oxide-semiconductor P-MOS circuit to perform the steering logic and a bipolar circuit to perform the high current analog driver function. An analysis was made to predict possible failure modes, and irradiation tests were run on sample circuits. The subsequent test results showed satisfactory circuit performance, up to an irradiation level of approximately 10 to the 13th power nsq cm E or 10 keV and gamma radiation of 30,000 R. Author
- Electrical and Electronic Equipment